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tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 1 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? high power switching qfn 4x4 mm 24 l product features functional block diagram ? frequency range: dc C ? power handling: up to 40 w ? insertion loss: < 1 db ? isolation: - 40 db typical ? switching speed: 50 ns ? control voltages: 0 v/ - 40 v ? dimensions: 4.0 x 4.0 x 1.43 mm general description pin configuration the triquint tgs2351 - sm is a single - pole, double - throw (spdt) packaged switch. the tgs2351 - sm operates from dc to 6 ghz and is designed using triquints pin # symbol 1, 2, 5, 6, 7, 9, 12, 13, 18, 19, 22, 24, 25 gnd 3 and 4 rf in 8 vc2 10 and 11 rf out2 14, 15, 16, 17 n/c 20 and 21 rf out1 23 vc1 ordering information part no. eccn description tgs2351 - sm ear99 dc C 3 & 4 10 & 11 20 & 21 8 23 vc2 j1 rf in vc1 j2 rf out1 j3 rf out2
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 2 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating control voltage, vc - 50 v control current , ic - 1 to 7.8 ma power dissipation , pdiss 10 w rf input power, cw, 50,t = 25oc o c mounting temperature (30 seconds) 260 o c storage temperature - 55 to 15 0 o c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter min typ ical max units v c1 - 40 / 0 v vc2 0 / - 40 v ic1 / ic2 - 0.4 to 0.1 ma electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25oc, vc1 = - 40/0 v, vc2 = 0/ - 40 v, se e function table at application circuit on page 7 parameter min typical max units operational frequency range dc 6 ghz control current (ic 1/ ic2) - 1 0.1 ma insertion loss (on - state): dc to 5 ghz 0.5 1 db insertion loss (on - state): 6 ghz 0.8 1.2 input return loss C C C 1/ 46 dbm output power @ pin = 46dbm, 1 - 6ghz 45 dbm insertion loss temperature coef fic i ent - 0.003 db/c output toi @ p in = 2 3 dbm 5 0 dbm switching speed C 2 / 50 ns switching speed C 2 / 50 ns 1/ the input power will be reduced if < 10 mhz . 2 / these switching speed dependent on switch driver circuit to deliver vc = 0/ - 40 v. the rise and fall time of the switch driver which was used to perform for this d ata is 35 ns, as shown on page 6 . for further technical information, see gan spdt switch drivers appli cation note
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 3 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of package tbase = 85 c jc = 6.1 c/w channel temperature (tch), and median lifetime (tm) tbase = 85 c, vc1 = 0 v, vc2 = - 40 v, pin = 40 w, pdiss = 5.3 w tch = 118 c tm = 1.4 e+9 hours 1 .e+ 04 1 .e+ 05 1 .e+ 06 1 .e+ 07 1 .e+ 08 1.e+09 1 .e+ 10 1.e+11 1 .e+ 12 1 .e+ 13 1 .e+ 14 1 .e+ 15 25 50 75 100 125 150 175 200 225 250 275 median lifetime, tm (hours) channel temperature, tch ( c) median lifetime (tm) vs. channel temperature (tch) fet 7
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 4 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance - 2.0 - 1.8 - 1.6 - 1.4 - 1.2 - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 insertion loss (db) frequency (ghz) insertion loss (on - state) vs. frequency vc1 = - 40 v, vc2 = 0 v, +25 0 c - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 0 1 2 3 4 5 6 7 8 9 10 isolation (db) frequency (ghz) isolation (off - state) vs. frequency vc1 = 0 v, vc2 = - 40 v, +25 0 c - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 1 2 3 4 5 6 7 8 9 10 off - state return loss (dbm) frequency (ghz) return loss (off - state) vs. frequency vc1 = 0 v, vc2 = - 40 v, +25 0 c irl orl - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 1 2 3 4 5 6 7 8 9 10 on - state return loss (db) frequency (ghz) return loss (on - state) vs. frequency vc1 = - 40 v, vc2 = 0 v, +25 0 c irl orl - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 34 36 38 40 42 44 46 loss compression (db) input power (dbm) loss compression vs. pin vs. frequency vc1 = - 40 v, vc2 = 0 v, +25 0 c 1 ghz 2 ghz 3 ghz 4 ghz - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 34 36 38 40 42 44 46 loss compression (db) input power (dbm) loss compression vs. pin vs. frequency vc1 = - 40 v, vc2 = 0 v, +25 0 c 100 mhz 300 mhz 500 mhz 700 mhz 900 mhz
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 5 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) 0.00 0.01 0.02 0.03 0.04 0.05 34 36 38 40 42 44 46 control current, ic (ma) input power (dbm) control current vs. pin vc1 = - 40 v, vc2 = 0 v, frequency = 3 ghz, +25 0 c - 2.0 - 1.8 - 1.6 - 1.4 - 1.2 - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 insertion loss (db) frequency (ghz) insertion loss (on - state) vs. freq vs. vc vc2 = 0 v, +25 0 c vc1 = - 40 v vc1 = - 30 v vc1 = - 20 v - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 1 2 3 4 5 6 7 8 9 10 isolation (db) frequency (ghz) isolation (off - state) vs. freq vs. vc vc1 = 0 v, +25 0 c vc2 = - 40 v vc2 = - 30 v vc2 = - 20 v - 5 - 4 - 3 - 2 - 1 0 1 34 36 38 40 42 44 46 loss compression (db) input power (dbm) loss compression vs. pin vs. vc vc2 = 0 v, frequency = 3 ghz, +25 0 c vc1 = - 40 v vc1 = - 30 v vc1 = - 20 v - 2.0 - 1.8 - 1.6 - 1.4 - 1.2 - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 insertion loss (db) frequency (ghz) insertion (on - state) vs. freq vs. temp vc1 = - 40 v, vc2 = 0 v - 55 c +25 c +85 c - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 1 2 3 4 5 6 7 8 9 10 isolation (db) frequency (ghz) isolation (off - state) vs. freq vs. temp vc1 = 0 v, vc2 = - 40 v - 55 c +25 c +85 c
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 6 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) switching speed C on 50 ns vc = 0/ - 40 v, freq = 3 ghz, pin = 30 dbm, +25 0 c switching speed - off 50 ns vc = 0/ - 40 v, freq = 3 ghz, pin = 30 dbm, +25 0 c - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 34 36 38 40 42 44 46 loss compression (db) input power (dbm) loss compression vs. pin vs. temp vc1 = - 40 v, vc2 = 0 v, frequency = 3 ghz - 55 c +25 v +85 c 30 35 40 45 50 55 60 65 70 1 2 3 4 5 6 7 8 toi (dbm) frequency (ghz) toi vs. frequency vc1 = 0 v, vc2 = - 40 v, pin = 23dbm, ? f = 10 mhz, +25 0 c toi measurements above 60 dbm are limited by the test set
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 7 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? application circuit this switch can be configured as a single pole, single throw (spst) by terminating one unused rf out port with a 50 ohm load. bias - up procedure bias - down procedure vc1 or vc2 set to - 40 v (see function table below for rf path) turn off rf supply vc2 or vc1 set to 0 v (see function table below for rf p ath) turn vc1 or vc2 to 0v apply rf signal to rf input turn vc2 or vc1 to 0 v function table rf p ath state vc1 vc2 rf in to rf out1 (50 ohm load to rf out2) on - state (insertion loss) 0 v - 40 v off - state (isolation) - 40 v 0 v rf in to rf out2 (50 ohm load to rf out1) on - state (insertion loss) - 40 v 0 v off - state (isolation) 0 v - 40 v j2 rf out1 vc1 -40 v / 0 v TGS2351-SM 1 2 3 4 5 6 j1 rf in 18 17 16 15 14 13 vc2 0 v / -40 v j3 rf out2 7 8 9 10 11 12 24 23 22 21 20 19
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 8 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? pin description pin symbol description 1, 2, 5, 6, 7, 9, 12, 13, 18, 19, 22, and 24 gnd no internal connection; must be grounded on pcb 3 and 4 rf in input, matched to 50 ohms, dc coupled 9, 22 gnd connected to gnd paddle (pin 25) must be grounded on pcb to improve isolation 8 vc2 control voltage #2 ; se e application circuit on page 7 as an example 10 and 11 rf out2 output #2 , matched to 50 ohms , dc coupled 14, 15, 16, and 17 n/c no internal connection; can be grounded or left open 20 and 21 rf out1 output #1 , matched to 50 ohms , dc coupled 23 vc1 control voltage #1; se e application circuit on page 7 as an example 25 gnd backside paddle. multiple vias should be employed to minimize inductance and thermal resistance; see m ounting configuration on page 11 for suggested footprint. , gnd 1 2 3 4 5 6 25 , gnd , rf in , rf in , gnd , gnd , gnd 18 17 16 15 14 13 , n/c , n/c , n/c , n/c , gnd , gnd 7 8 9 10 11 12 , vc2 , gnd , rf out2 , rf out2 , gnd , gnd 24 23 22 21 20 19 , vc1 , gnd , rf out1 , rf out1 , gnd pin #1 identification
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 9 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? applications information pc board layout top rf layer is 0.0 10 thick rogers 4350 , ? r = 3. 66 . metal layers are 0.5 - oz copper. micro strip 50 line detail : width = 0 . 0 217 . the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pc b land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from company to company, careful process development is recommended. for further technical information, r efer to the tg s2351 - sm product information page. rf in rf out1 rf out2
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 10 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information package information and dimensions all dimensions are in millimeters. t his package is lead - free/rohs - complia nt with a aluminum nitride base (aln), and the plating material on the leads is electroless gold (au) over electroless nickel (ni) . it is compatible with both lead - free (maximum 260 c reflow temperature) and tin - lead (maximum 245 c reflow temperature) soldering processes. the tgs2351 - sm will be marked with the 2351 designator and a lot code marked below the part designator. the y y represents the last two digit s of the year the part was manufactured, the ww is the work week, and the m xxx is a supplier code and partial batch id. 2351 yyww mxxx
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 11 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information (cont . ) mounting configuration all dimensions are in millimeters (inches). n otes: 1. a heatsink underneath the area of the pcb for the mounted device is recommended for proper thermal operation. 2. ground / thermal vias are critical for the proper performan ce of this device. vias have a f inal plated thru diameter of . 203 mm (.0 08 ). .406 .406
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 12 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? product compliance information esd information esd rating: class 1b value: passes ? 5 00 v min. test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability compatible with the latest version of j - std - 020, lead free solder, 260 this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level 1 at +260 c convection reflow the part is rated moisture sensitivity level t bd at 260c per jedec standard ipc/jedec j - std - 020. eccn us department of commerce ear99 recommended soldering temperature profile
tg s2351 - sm dc C 6 ghz high power spdt switch data sheet: rev a 06/20 / 12 - 13 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information ab out triquint: web: www.triquint.com tel: +1. 972.994.8465 email: info - sales@tqs.com fax: +1.972.99 4.8504 for technical questions and application information: email: info - products@tqs.com important notice the information contained herein is believed to be reliable . triquint makes no warranties regarding the information contain ed herein . triquint assumes no responsibility or liability whatsoever for any of the information contained her ein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all f aults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triq uint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual pro perty rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to caus e severe personal injury or death.

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